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CSR2930800BA Datasheet(PDF) 27 Page - List of Unclassifed Manufacturers

Part # CSR2930800BA
Description  FLASH MEMORY CMOS 8M (1M x 8/512K x 16) BIT
PDF  50 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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CSR2930800BA Datasheet(HTML) 27 Page - List of Unclassifed Manufacturers

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CSR2930800BA-90
27
s AC CHARACTERISTICS
• Read Only Operations Characteristics
Note: Test Conditions:
Output Load: 1 TTL gate and 100 pF (CSR2930800BA-90)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output:1.5 V
Parameter
Symbol
Test Setup
Value *
Unit
-90
JEDEC
Standard
Min
Max
Read Cycle Time
tAVAV
tRC
—90
—
ns
Address to Output Delay
tAVQV
tACC
CE = VIL
OE = VIL
—90
ns
Chip Enable to Output Delay
tELQV
tCE
OE = VIL
—90
ns
Output Enable to Output Delay
tGLQV
tOE
——
35
ns
Chip Enable to Output High-Z
tEHQZ
tDF
——
30
ns
Output Enable to Output High-Z
tGHQZ
tDF
——
30
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
tAXQX
tOH
—0
—
ns
RESET Pin Low to Read Mode
—
tREADY
——
20
µs
CE to BYTE Switching Low or High
—
tELFL
tELFH
——
5
ns
CL
VCC
Diodes
= IN3064
or Equivalent
2.7 k
Ω
Device
Under
Test
IN3064
or Equivalent
6.2 k
Ω
Figure 4
Test Conditions
Notes : CL
= 100 pF including jig capacitance (CSR2930800BA-90)



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