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TMA256B-L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TMA256B-L
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TMA256B-L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  TMA256B-L Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
TMA256B-L
DESCRIPTION
·
With TO-3PN packaging
·
Operating in 3 quadrants
·
High commutation capability
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Switching applications
·
Phase control
·
Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak reverse voltage
600
V
IT(RSM)
Average on-state current
Tc=83℃
25
A
ITSM
Surge non-repetitive on-state current
50HZ
60HZ
250
263
A
PG(AV)
Average gate power dissipation ( over any 20 ms period )
Tj=125℃
0.5
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~125
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM Rated;
VD=VDRM Rated;
Tj=25℃
Tj=125℃
100
2
μ
A
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
IT=20A
1.4
V
IGT
Gate-trigger current
VD =12V;RL=20Ω
Ⅰ
30
mA
Ⅱ
30
Ⅲ
30
VGT
Gate-trigger voltage
VD =12V;RL=20Ω
1.5
V
Rth (j-c)
Junction to case
1.5
℃
/W


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