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PAM8016 Datasheet(PDF) 6 Page - Diodes Incorporated

Part # PAM8016
Description  HAPTIC DRIVER FOR ERM AND LRA
PDF  10 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM8016 Datasheet(HTML) 6 Page - Diodes Incorporated

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PAM8016
Document number: DS40362 Rev. 2.0
6 of 10
www.diodes.com
June 2018
© Diodes Incorporated
PAM8016
Application Information
Overview
The typical application for applying PAM8016 haptic driver is to utilize the application processor in a touch-enabled or haptic-capable system and
execute haptic effects control to drive PAM8016 with predefined haptic control data. The PAM8016 supports typical analog-control interface with
analog inputs and SD control to operate as instructed by the application processor. A system designer can choose to activate the application
processor by playing low-latency effects (such as an action triggered by a physical button) or predefined analog data patterns through the analog
interface (differential, single-ended, or PWM inputs) to PAM8016. The PAM8016 generates corresponding output voltages for driving the haptic
element accordingly.
The application diagram shown in Figure 1 illustrates the connection between the application processor and PAM8016. For nominal-differential or
single-ended analog-control signals generated by the application processor only the typical input decoupling capacitors, Cb1 and Cb2, are required
for screening out unintended noises to PAM8016 (as shown in the left of Figure 1).
However, if the PWM signals are provided, the low-pass RC filter is suggested to filter out the high-frequency noises induced by PWM driving
signal (as shown in the right of Figure 1). Because typical haptic elements operate in the range of a few hundred hertz (~300Hz or below), it is
suggested to set the cut-off frequency for the low-pass RC filter network (R1 C1 and R2C2) to 10Khz or less to eliminate the untended noise impact
while driving the haptic element.
LRA
or
ERM
OUT+
VDD
2.8V to 5.5V
1uF
IN+
IN-
PVDD
OUT-
M
SD
GND
GND
PAM8016
VDD
Cb1
Cb2
Vin
SD
LRA
or
ERM
OUT+
R1
VDD
2.8V to 5.5V
1uF
IN+
IN-
PVDD
OUT-
M
SD
GND
GND
Application
Processor
PWM /
GPIO
GPIO
PAM8016
VDD
C1
Cb1
Cb2
R2
C2
Figure 1: PAM8016 Simplified Configurations for Typical Single-Ended Analog Inputs or PWM Inputs
Input Capacitors (Ci )
In the typical application an input capacitor, Ci, is required to allow the amplifier to bias the input signal to the proper DC level for optimum
operation. In this case, Ci and the minimum input impedance Ri form a high-pass filter with the corner frequency determined in the follow equation:
It is important to consider the value of Ci as it directly affects the low-frequency performance of the circuit. For example
when Ri is 150kΩ, the
specification calls for a flat bass response down to 150Hz. Equation is reconfigured as followed:
When input resistance variation is considered, the Ci is 7nF, so one would likely choose a value of 10nF. A further consideration for this capacitor
is the leakage path from the input source through the input network (Ci, Ri + Rf) to the load. This leakage current creates a DC offset voltage at
the input to the amplifier that reduces useful headroom, especially in high-gain applications. For this reason, a low-leakage tantalum or ceramic
capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most
applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Note that it is important to confirm the capacitor
polarity in the application.
Decoupling Capacitor (CS )
The PAM8016 is a high-performance haptic driver that suggests adequate power-supply decoupling to ensure the output total harmonic distortion
(THD) is as low as possible. Power supply decoupling also prevents the oscillations caused by long lead length between the driver and the haptic
elements.
The optimum decoupling is achieved by using two different types of capacitors that target the different types of noise the power supply leads. For
higher-frequency transients, spikes, or digital hash on the line, a good low-equivalent series
resistance (ESR) ceramic capacitor, typically 1μF,
can be placed as close as possible to the device VDD pin for the best operation. For filtering lower-frequency noise signals, a large ceramic
capacitor of 10
μF or greater placed near the haptic driver is recommended.
C
1
f
2 RiCi
ic
1
Ci
2 R f



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