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PAM8016 Datasheet(PDF) 6 Page - Diodes Incorporated |
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PAM8016 Datasheet(HTML) 6 Page - Diodes Incorporated |
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6 / 10 page ![]() PAM8016 Document number: DS40362 Rev. 2.0 6 of 10 www.diodes.com June 2018 © Diodes Incorporated PAM8016 Application Information Overview The typical application for applying PAM8016 haptic driver is to utilize the application processor in a touch-enabled or haptic-capable system and execute haptic effects control to drive PAM8016 with predefined haptic control data. The PAM8016 supports typical analog-control interface with analog inputs and SD control to operate as instructed by the application processor. A system designer can choose to activate the application processor by playing low-latency effects (such as an action triggered by a physical button) or predefined analog data patterns through the analog interface (differential, single-ended, or PWM inputs) to PAM8016. The PAM8016 generates corresponding output voltages for driving the haptic element accordingly. The application diagram shown in Figure 1 illustrates the connection between the application processor and PAM8016. For nominal-differential or single-ended analog-control signals generated by the application processor only the typical input decoupling capacitors, Cb1 and Cb2, are required for screening out unintended noises to PAM8016 (as shown in the left of Figure 1). However, if the PWM signals are provided, the low-pass RC filter is suggested to filter out the high-frequency noises induced by PWM driving signal (as shown in the right of Figure 1). Because typical haptic elements operate in the range of a few hundred hertz (~300Hz or below), it is suggested to set the cut-off frequency for the low-pass RC filter network (R1 C1 and R2C2) to 10Khz or less to eliminate the untended noise impact while driving the haptic element. LRA or ERM OUT+ VDD 2.8V to 5.5V 1uF IN+ IN- PVDD OUT- M SD GND GND PAM8016 VDD Cb1 Cb2 Vin SD LRA or ERM OUT+ R1 VDD 2.8V to 5.5V 1uF IN+ IN- PVDD OUT- M SD GND GND Application Processor PWM / GPIO GPIO PAM8016 VDD C1 Cb1 Cb2 R2 C2 Figure 1: PAM8016 Simplified Configurations for Typical Single-Ended Analog Inputs or PWM Inputs Input Capacitors (Ci ) In the typical application an input capacitor, Ci, is required to allow the amplifier to bias the input signal to the proper DC level for optimum operation. In this case, Ci and the minimum input impedance Ri form a high-pass filter with the corner frequency determined in the follow equation: It is important to consider the value of Ci as it directly affects the low-frequency performance of the circuit. For example when Ri is 150kΩ, the specification calls for a flat bass response down to 150Hz. Equation is reconfigured as followed: When input resistance variation is considered, the Ci is 7nF, so one would likely choose a value of 10nF. A further consideration for this capacitor is the leakage path from the input source through the input network (Ci, Ri + Rf) to the load. This leakage current creates a DC offset voltage at the input to the amplifier that reduces useful headroom, especially in high-gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Note that it is important to confirm the capacitor polarity in the application. Decoupling Capacitor (CS ) The PAM8016 is a high-performance haptic driver that suggests adequate power-supply decoupling to ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents the oscillations caused by long lead length between the driver and the haptic elements. The optimum decoupling is achieved by using two different types of capacitors that target the different types of noise the power supply leads. For higher-frequency transients, spikes, or digital hash on the line, a good low-equivalent series resistance (ESR) ceramic capacitor, typically 1μF, can be placed as close as possible to the device VDD pin for the best operation. For filtering lower-frequency noise signals, a large ceramic capacitor of 10 μF or greater placed near the haptic driver is recommended. C 1 f 2 RiCi ic 1 Ci 2 R f |
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