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2N65 Datasheet(PDF) 2 Page - SUNMATE electronic Co., LTD

Part # 2N65
Description  N-CHANNEL POWER MOSFET
PDF  8 Pages
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Manufacturer  SUNMATE [SUNMATE electronic Co., LTD]
Direct Link  http://www.sunmate.tw/
Logo SUNMATE - SUNMATE electronic Co., LTD

2N65 Datasheet(HTML) 2 Page - SUNMATE electronic Co., LTD

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ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
TYP
MIN
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
GS
V = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650V, VGS = 0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30V, VDS = 0V
100 nA
Reverse
e
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
DS
V = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
4
4.4
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
pF
Output Capacitance
COSS
pF
Reverse Transfer Capacitance
CRSS
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
-
ns
Turn-On Rise Time
tR
ns
25
-
Turn-Off Delay Time
tD(OFF)
ns
20
-
Turn-Off Fall Time
tF
-
ns
Total Gate Charge
QG
VDS= 480V,ID= 2.4A,
VGS= 10V (Note 1, 2)
5.7
-
nC
Gate-Source Charge
QGS
nC
1.8
Gate-Drain Charge
QGD
nC
2
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.0
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Reverse Recovery Time
trr
VGS = 0 V, IS = 2A,
dIF/dt = 100 A/μs (Note 1)
357
ns
Reverse Recovery Charge
QRR
μC
2
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2.. Essentially independent of operating temperature
VGS = -30V, VDS = 0V
GS
V = 10V, ID =1A
300
45
2
-
-
-
VDD =300V, ID =2A,
RG=25Ω (Note 1, 2)
25
GS
V = 0 V, ISD = 2.0 A
-
-
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
TO-220/ITO-220
TO-262/TO-263
θJA
62.5
°C/W
TO-251/ TO-252
110
Junction to Case
θJC
2.35
°C/W
ITO-220
5.5
TO-251/ TO-252
2.9
TO-220/ITO-220
TO-262/TO-263



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