1. Gate

2. Drain

3. Source

Pin Definition:

●

●

●

●

RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A

Fast switching capability

Lead free in compliance with EU RoHS directive.

Improved dv/dt capability, high ruggedness

Block Diagram

TO-262,TO-263 Package

D

G

S

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Continuous Drain Current

2.0

A

Pulsed Drain Current (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

115

mJ

Power Dissipation

TO-220/TO-262/TO-263

44

W

ITO-220

23

W

TO-251/TO-252

34

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

2N60 Series

N-CHANNEL POWER MOSFET

Features

Mechanical Data

Part No.

Package

Packing

TO-251

75pcs / Tube

TO-220

50pcs / Tube

ITO-220

50pcs / Tube

TO-252

75pcs / Tube

TO-262

50pcs / Tube

TO-263

50pcs / Tube

2N60P

2N60D

2N60T

2N60F

2N60K

2N60G

Ordering Information