ACE4562M

N & P-Channel 60-V (D-S) MOSFET

VER 1.1

1

Description

The ACE4562M is the N & P-Channel 60-V (D-S) MOSFET power field effect transistors are produced

using high cell density, DMOS trench technology. This high density process is especially tailored to

minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-line power loss, and

resistance to transients are needed.

Features





Low thermal impedance



Fast switching speed

Applications



DC/DC Conversion Circuits



Motor Drives

Absolute Maximum Ratings

Parameter

Symbol

Nch Limit

Pch Limit Units

Drain-Source Voltage

60

-60

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

a

7.5

-4.2

A

5.9

-3.3

Pulse Drain Current

b

20

-20

Continuous Drain Current (Diode Continuous)

a

2.8

-2.5

A

Power Dissipation

a

2.1

2.1

W

1.3

1.3

Operating Junction and Storage Temperature Range

-55 to 150

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t≦10sec

62.5

Steady State

110

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

r

60

27 @ V

7.2

33 @ V

6.5

-60

40 @ V

5.9

50 @ V

5.3