ZABG6004

Document number: DS38917 Rev. 2 - 2

2 of 11

www.diodes.com

March 2017

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ZABG6004

Device Description

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs

with a minimum of external components whilst operating from a minimal voltage supply and using minimal current.

The ZABG6004 has six FET bias stages that can be programmed to provide a constant drain current. Programming of the FET bias stage

to be biased for optimum noise and the later stages for optimum gain. All FET groups can be operated at currents in the range 4mA to 15mA,

Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG6004 includes an integrated

switched capacitor DC-DC converter generating a regulated output of -2V to allow single supply operation. The ZABG6004 has been designed to

It is possible to use less than the full complement of FET bias controls, unused drain and gate connections can be left open circuit without

affecting operation of the remaining bias circuits.

To protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate

drive from the bias circuits cannot exceed -2.5V. Additionally each stage has its own individual current limiter. Furthermore if the negative rail

experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will be limited, avoiding excessive current flow.

The ZABG6004 is available in the U-QFN3030-16 (Type B) and the QSOP-20 packages.

Device operating temperature is -40°C to +105°C to suit a wide range of environmental conditions.