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2N6212 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6212
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6212 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2N6212
DESCRIPTION
·
With TO-3 packaging
·
Very high DC current gain
·
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Electronic ignition
·
Alternator regulator
·
Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-350
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-5
A
IB
Collector Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
35
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
5.0
℃
/W


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