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3CD9D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3CD9D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistors 3CD9D DESCRIPTION · With TO-3 packaging · Large collector current · Low collector saturation voltage · High power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter · Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.66 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation@Tc=75℃ 150 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ |
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