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CD610816C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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CD610816C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 CD610816C Dual Diode Isolated Module FEATURES · Electrically Isolated Heatsinking · Metal Baseplate · Low Thermal Impedance For Improved Current Capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power supplies · Bridge Circuits · AC/DC Motor Drives ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VR Repetitive Peak Reverse Voltage 800 V IF(AV) Average Forward Current 180°conduction,TC=100℃ 160 A IFSM Non-Repetitive, Peak On Cycle Surge Forward Current 60Hz,100% VRRM reapplied, TJ=150℃ 3500 A 60Hz,No VRRM reapplied,TJ=150℃ 4200 50Hz,100% VRRM reapplied,TJ=150℃ 3350 50Hz,No VRRM reapplied,TJ=150℃ 4000 Viso Isolated Voltage TC=25℃,1sec 2500 V TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ |
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