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IXFX150N30P3 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFX150N30P3 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 150C 300 V V DGR T J = 25 C to 150C, R GS = 1M 300 V V GSS Continuous 20 V V GSM Transient 30 V I D25 T C = 25C 150 A I DM T C = 25C, Pulse Width Limited by TJM 375 A I A T C = 25C75 A E AS T C = 25C4 J P D T C = 25C 1300 W dv/dt I S I DM, VDD VDSS, TJ 150°C 35 V/ns T J -55 ... +150 C T JM 150 C T stg -55 ... +150 C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 3mA 300 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.0 V I GSS V GS = 20V, VDS = 0V 200 nA I DSS V DS = VDSS, VGS = 0V 25 A T J = 125C 1 mA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 19 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK150N30P3 IXFX150N30P3 V DSS = 300V I D25 = 150A R DS(on) 19m t rr 250ns DS100478A(12/13) Polar3TM HiPerFETTM Power MOSFET Features Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low Q G Low R DS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXFX) Tab G D S TO-264 (IXFK) S G D Tab Preliminary Technical Information |
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