FEATURES

• Isolated IGBTs In A Hermetic Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• High Switching Speed

• Low Tail Current

• Available With Free Wheeling Diode

• Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This IGBT power transistor features the high switching speeds of a power MOSFET

and the low on-resistance of a bipolar transistor. It is ideally suited for high power

switching applications such as frequency converters for 3Ø motors, UPS and high

power SMPS.

3.1 - 155

3.1

1000 Volt, 25 Amp, N-Channel IGBT

In A Hermetic Metal Package

4 11 R2

Supersedes 2 07 R1

INSULATED GATE BIPOLAR TRANSISTOR

(IGBT) IN A HERMETIC TO-258AA PACKAGE

OM6516SC

OM6520SC

SCHEMATICS

.707

.697

.750

.500

.835

.815

.695

.685

.165

.155

.200 TYP.

.550

.530

.270

.240

.045

.035

.140 TYP.

.092 MAX.

.065

.055

.005

OM6516SC

OM6520SC(w/Diode)

Collector

Collector

Emitter

Emitter

12

3

CE

G

Gate

Gate

MECHANICAL OUTLINE

PART

I

V

(BR)CES

V

T

q

q

JC

P

D

T

J

NUMBER

@ 90°C, A

V

V

ns

°C/W

W

°C

OM6516SC

25

1000

4.0

300

1.0

125

150

OM6520SC

25

1000

4.0

300

1.0

125

150

NOTE: IGBTs are also available in Z-Tab, dual and quad

pak styles - Please call the factory for more information.

PACKAGE OPTIONS

MOD PAK

6 PIN SIP