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FII30-12D Datasheet(PDF) 1 Page - IXYS Corporation |
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FII30-12D Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() 1 - 2 © 2000 IXYS All rights reserved FII 30-12D Features • NPT IGBT - low saturation voltage - no latch up - positive temperature coefficient for easy paralleling • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier IGBT Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 1200 V V GES ± 20 V I C25 T C = 25°C 30 A I C90 T C = 90°C 18 A I CM V GE = ±15 V; RG = 82 Ω; TVJ = 125°C 35 A V CEK RBSOA, Clamped inductive load; L = 100 µH V CES t SC V CE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive P tot T C = 25°C 125 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 20 A; VGE = 15 V; TVJ = 25°C 2.3 3.0 V T VJ = 125°C 2.6 V V GE(th) I C = 0.6 mA; VGE = VCE 4.5 6.5 V I CES V CE = VCES; VGE = 0 V; TVJ = 25°C 0.9 mA T VJ = 125°C 0.9 mA I GES V CE = 0 V; VGE = ± 20 V 200 nA t d(on) 100 ns t r 75 ns t d(off) 500 ns t f 70 ns E on 3.0 mJ E off 2.4 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 1000 pF Q Gon V CE = 600V; VGE = 15 V; IC = 18 A 70 nC R thJC 1.0 K/W Inductive load, T VJ = 125°C V CE = 600 V; IC = 20 A V GE = ±15 V; R G = 82 Ω I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.3 V Fast IGBT Chopper in ISOPLUS i4-PACTM 1 5 Advanced Technical Information IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 |
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