IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH150N17T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

e

∅ P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

75

118

S

C

iss

9800

pF

C

oss

V

1110

pF

C

rss

60

pF

t

d(on)

22

ns

t

r

30

ns

t

d(off)

58

ns

t

f

30

ns

Q

g(on)

155

nC

Q

gs

V

40

nC

Q

gd

47

nC

R

thJC

0.18

°C/W

R

thCH

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

150

A

I

SM

Repetitive, Pulse width limited by T

JM

400

A

V

SD

I

1.2

V

t

rr

120

ns

I

RM

1.05

A

Q

RM

17.5

nC

Resistive Switching Times

V

R

I

-di/dt = 200A/

μs

V