IXGA9289 datasheet(1/2 Pages) IXYS

Part #	IXGA9289

Description	For Plasma Display Applications

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

GE(th)

I

C

= 250

µA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = VCES

T

J =

25

°C1

µA

V

GE = 0 V

T

J = 125°C

200

µA

I

GES

V

CE = 0 V, VGE = ±20 V

±200

nA

V

CE(sat)

V

GE = 15V, IC = 60 A

1.4

1.8

V

I

C = 120 A

1.7

V

Trench IGBT

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

300

V

GEM

±30

V

I

C25

T

C

= 25

°C, IGBT chip capability

120

A

I

C90

T

C

= 90

°C75

A

I

CM

T

J

≤ 150°C, tp < 300 µs

200

A

I

C(RMS)

Lead current limit

75

A

SSOA

V

GE = 15 V, TVJ = 150°C, RG = 20 Ω

I

CM = 100

A

(RBSOA)

Clamped inductive load, V

CE < 300 V

P

C

T

C

= 25

°C

250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10s

260

°C

M

d

Mounting torque (TO-3P)

1.3/10 Nm/lb.in.

Weight

TO-263

3

g

DS99361(03/05)

Features

•International standard packages

•Trench gate construction for low V

CE(sat)

- for minimum on-state conduction

losses

•MOS Gate turn-on

- drive simplicity

Applications

• PDP Screen Drivers

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

• Capacitor discharge

IXGA9289

V

CES

= 300 V

I

C25

= 120 A

V

CE(sat)(typ) =

1.4 V

Advanced Technical Information

For Plasma Display Applications

(Development type IXGA_120N30TC)

G = Gate

D = Drain

S = Source

TAB = Drain

TO-263 (IXGA)

G

S

(TAB)

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