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IXS839B Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXS839B
Description  Synchronous Buck MOSFET Driver
PDF  11 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXS839B Datasheet(HTML) 5 Page - IXYS Corporation

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IXYS
5
IXS839 / IXS839A / IXS839B
Electrical Characteristics
High Side Gate Driver Circuit
TA = -40°C to 85°C, VDD = 5V, 4V < VBST < 26V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
High Side Gate-Driver
On-Resistance, Sourcing
Current
RHGD_SRC
VBST – VSW = 4.6V
2.2
Ω
High Side Gate-Driver
On-Resistance, Sinking
Current
RHGD_SNK
VBST – VSW = 4.6V
1.2
Ω
High Side Gate-Driver
(1)
Rise-Time
tR_HGD
CLOAD = 3nF
TR_HGD measured from 10% to
90% of (VHGD - VSW)
20
nS
High Side Gate-Driver
(1)
Fall-Time
tF_HGD
CLOAD = 3nF
TF_HGD measured from 90% to
10% of (VHGD - VSW)
15
nS
35
nS
Propagation Delay
(1)
tPD_HGD1
tPD_HGD2
CLOAD_HGD = CLOAD_LGD = 3nF
CDLY = 0pF
50
nS
Low Side Gate Driver Circuit
TA = -40°C to 85°C, VDD = 5V, 4V < VBST < 26V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Low Side Gate-Driver
On-Resistance, Sourcing
Current
RLGD_SRC
VDD – VPGND = 4.6V
2
Ω
Low Side Gate-Driver
On-Resistance, Sinking
Current
RLGD_SNK
VDD – VPGND = 4.6V
1
Ω
Low Side Gate-Driver
(1)
Rise-Time
tR_LGD
CLOAD = 3nF
TR_LGD measured from 10% to
90% of (VLGD – VPGND)
18
nS
Low Side Gate-Driver
(1)
Fall-Time
tF_LGD
CLOAD = 3nF
TF_LGD measured from 90% to
10% of (VLGD - VSW)
12
nS
60
nS
Propagation Delay
(1)
tPD_LGD1
tPD_LGD2
CLOAD_HGD = CLOAD_LGD = 3nF
CDLY = 0pF
20
nS
Shut Down Circuit Characteristics
TA = -40°C to 85°C, VDD = 5V, 4V < VBST < 26V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Propagation Delay
(2)
tPD_LGDSD1
25
50
nS
Propagation Delay
(2)
tPD_LGDSD2
10
20
nS
Propagation Delay
(3)
tPD_GDSD1
400
800
nS
Propagation Delay
(3)
tPD_GDSD2
800
1200
nS
*Notes:
(1) See Timing Diagram in Figure 4
(2) See Timing Diagram in Figure 5
(3) See Timing Diagram in Figure 6



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