Transistors

1

Publication date: November 2002

SJC00004BED

Silicon PNP epitaxial planar type

For low-frequency driver amplification

Complementary to 2SC1509

■ Features

• High collector-emitter voltage (Base open) V

CEO

• Optimum for the driver stage of a low-frequency and 25 W to 30 W

output amplifier.

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−80

V

Collector-emitter voltage (Base open)

−80

V

Emitter-base voltage (Collector open)

−5V

Collector current

− 0.5

A

Peak collector current

−1A

Collector power dissipation

1W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= −10 µA, I

E

= 0

−80

V

Collector-emitter voltage (Base open)

−80

V

Emitter-base voltage (Collector open)

−5V

Collector-base cutoff current (Emitter open)

= −20 V, I

E

= 0

− 0.1

µA

1

2

90

220



50

100

Collector-emitter saturation voltage

= −500 mA, I

B

= −50 mA

− 0.2

− 0.4

V

Base-emitter saturation voltage

− 0.85

−1.2

V

Transition frequency

120

MHz

Collector output capacitance

11

20

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Palse measurement

*2: Rank classification

(1.27)

(1.27)

0.45

+0.2

–0.1

0.45

+0.2

–0.1

13

2

Rank

Q

R

90 to 155

130 to 220

1 : Emitter

2 : Collector

3 : Base

EIAJ : SC-51

TO-92L-A1 Package

Note) The part number in the parenthesis shows conventional part number.