Power Transistors

1

Publication date: April 2003

SJD00012BED

Silicon PNP epitaxial planar type

For power amplification

Complementary to 2SD1253, 2SD1253A

■ Features

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

CE(sat)

• N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment.

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SB0930

−60

V

(Emitter open)

2SB0930A

−80

Collector-emitter voltage 2SB0930

−60

V

(Base open)

2SB0930A

−80

Emitter-base voltage (Collector open)

−5V

Collector current

−4A

Peak collector current

−8A

Collector power dissipation

40

W

1.3

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage

2SB0930

−60

V

(Base open)

2SB0930A

−80

Collector-emitter cutoff

2SB0930

−60 V, V

−400

µA

current (E-B short)

2SB0930A

−400

Collector-emitter cutoff

2SB0930

−700

µA

current (Base open)

2SB0930A

−60 V, I

−700

Emitter-base cutoff current (Collector open)

−1mA

Forward current transfer ratio

70

250



= −4 V, I

C

= −3 A

15

Base-emitter voltage

−2.0

V

Collector-emitter saturation voltage

−1.5

V

Transition frequency

= −10 V, I

C

= − 0.5 A, f = 10 MHz

20

MHz

Turn-on time

0.2

µs

Storage time

0.5

µs

Fall time

0.2

µs

0 to 0.4

R = 0.5

(8.5)

(6.5)

(6.0)

1.3

123

Rank

Q

P

70 to 150

120 to 250

1 : Base

2 : Collector

3 : Emitter

N-G1 Package

Note) Self-supported type package is also prepared.

Note) The part number in the parenthesis shows conventional part number.