Power Transistors

1

Publication date: April 2003

c

Silicon PNP epitaxial planar type darlington

For power amplification and switching

Complementary to 2SD1276 and 2SD1276A

■ Features

• High forward current transfer ratio h

FE

• High-speed switching

• Full-pack package which can be installed to the heat sink with one screw

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SB0950

−60

V

(Emitter open)

2SB0950A

−80

Collector-emitter voltage 2SB0950

−60

V

(Base open)

2SB0950A

−80

Emitter-base voltage (Collector open)

−5V

Collector current

−4A

Peak collector current

−8A

Collector power

40

W

dissipation

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage

2SB0950

−60

V

(Base open)

2SB0950A

−80

Base-emitter voltage

= −3 V, I

C

= −3 A

−2.5

V

Collector-base cutoff

2SB0950

−200

µA

current (Emitter open)

2SB0950A

−200

Collector-emitter cutoff

2SB0950

= −30 V, I

B

= 0

−500

µA

current (Base open)

2SB0950A

−500

Emitter-base cutoff current (Collector open)

−2mA

Forward current transfer ratio

= −3 V, I

C

= − 0.5 A

1 000



1 000

10 000

Collector-emitter saturation voltage

−2V

= −5 A, I

B

= −20 mA

−4V

Transition frequency

20

MHz

Turn-on time

0.3

µs

Storage time

= −50 V

2

µs

Fall time

0.5

µs

Note) The part numbers in the parenthesis show conventional part number.

0.5

+0.2

–0.1

2

13

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

R

Q

P

1 000 to 2 500

2 000 to 5 000 4 000 to 10 000

Internal Connection

B

C

E