2SB968 datasheet(1/4 Pages) PANASONIC

Part #	2SB968

Description	For Low-Frequency Output Amplification

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

Logo

1 / 4 page

Power Transistors

1

Publication date: February 2003

SJD00035AED

2SB0968 (2SB968)

Silicon PNP epitaxial planar type

For low-frequency output amplification

Complementary to 2SD1295

■ Features

• Possible to solder radiation fin directly to printed circuit board

• High collector-emitter voltage (Base open) V

CEO

• Large collector power dissipation P

C

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

−50

V

Collector-emitter voltage (Base open)

VCEO

−40

V

Emitter-base voltage (Collector open)

VEBO

−5V

Collector current

IC

−1.5

A

Peak collector current

ICP

−3A

Collector power dissipation (TC = 25°C)

PC

10

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −1 mA, IE = 0

−50

V

Collector-emitter voltage (Base open)

VCEO

IC

= −2 mA, I

B

= 0

−40

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = −20 V, IE = 0

−1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = −10 V, IB = 0

−100

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= −5 V, I

C

= 0

−10

µA

Forward current transfer ratio

hFE1 *

VCE = −5 V, IC = −1 A

80

220



hFE2

VCE = −5 V, IC = −1 mA

10

Collector-emitter saturation voltage

VCE(sat)

IC

= −1.5 A, I

B

= − 0.15 A

−1V

Base-emitter saturation voltage

VBE(sat)

IC = −2 A, IB = − 0.2 A

−1.5

V

Transition frequency

fT

VCE = −5 V, IC = − 0.5 A, f = 200 MHz

150

MHz

Collector output capacitance

Cob

VCB

= −20 V, I

E

= 0, f = 1 MHz

45

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

6.5±0.1

2.3±0.1

(5.3)

(4.35)

(3.0)

0.75±0.1

2.3±0.1

4.6±0.1

1

123

3

2

0.5±0.1

1.0±0.1

0.1±0.05

0.5±0.1

5.3±0.1

4.35±0.1

Unit: mm

1: Base

2: Collector

3: Emitter

EIAJ: SC-63

U-G1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

hFE1

80 to 160

120 to 220

Note) Self-supported type package is also prepared.

Note) The part number in the parenthesis shows conventional part number.

Similar Part No. - 2SB968

Manufacturer	Part #	Datasheet	Description
Panasonic Semiconductor	2SB968	53Kb / 3P	Silicon PNP epitaxial planar type(For low-frequency output amplification)
Guangdong Kexin Industr...	2SB968	39Kb / 1P	Silicon PNP Epitaxial Planar Type
	2SB968-P	1Mb / 3P	PNP Transistors
	2SB968-Q	1Mb / 3P	PNP Transistors
	2SB968-R	1Mb / 3P	PNP Transistors

More results

Similar Description - 2SB968

Manufacturer	Part #	Datasheet	Description
Panasonic Semiconductor	2SB0779	68Kb / 3P	For low-frequency output amplification
	2SB0819	81Kb / 4P	For Low-Frequency Output Amplification
	2SB0976	68Kb / 3P	For Low-Frequency Output Amplification
	2SB1593	66Kb / 3P	For Low-Frequency Output Amplification
	2SD0592A	78Kb / 4P	For Low-Frequency Output Amplification
	2SD0946	68Kb / 3P	For Low-Frequency Amplification
	2SK0198	49Kb / 3P	For Low-Frequency Amplification
	2SK0663	73Kb / 3P	For Low-Frequency Amplification
Unisonic Technologies	2SB766A	117Kb / 3P	LOW FREQUENCY OUTPUT AMPLIFICATION
Unisonic Technologies	2SB766A	157Kb / 3P	LOW FREQUENCY OUTPUT AMPLIFICATION

More results

2SB968 Datasheet(PDF) 1 Page - Panasonic Semiconductor

2SB968 Datasheet(HTML) 1 Page - Panasonic Semiconductor

Similar Part No. - 2SB968

Similar Description - 2SB968

Html Pages

1 2 3 4

Datasheet Download

Link URL