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RL251G Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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RL251G Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  RL251G~RL257G Voltage 50V~1000V 2.5Amp General Purpose Rectifier Elektronische Bauelemente 04-Jun-2018 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 1 1 1 Cathode 2 2 2 2 Anode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Efficiency High Current Capability High Reliability High Surge Current Capability Low Power Loss Glass Passivated Chip Junction Solder Dip, Per JESD 22-B106 MECHANICAL DATA Molding Compound Meets UL 94 V-0 Flammability Rating Terminals: Tin Plated Leads, Solderable Per J-STD-002 and JESD22-B102 Polarity: Color Band Denotes Cathode End ORDER INFORMATION MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Part Number Unit RL 251G RL 252G RL 253G RL 254G RL 255G RL 256G RL 257G Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Average Forward Current @60Hz Sine Wave, Resistance Load, TL=80°C IF(AV) 2.5 A Surge(Non-Repetitive)Forward Current @60Hz Half-Sine Wave,1 Cycle, TA=25°C IFSM 120 A Maximum Instantaneous Forward Voltage Drop Per Diode @IFM=2.5A VFM 1.1 V Maximum DC Reverse Current @Rated DC Blocking Voltage Per Diode TA=25°C IRRM 2.5 µA TA=125°C 50 Typical Junction Capacitance 1 CJ 35 pF Typical Thermal Resistance from Junction-Ambient RθJA 45 °C/W Typical Thermal Resistance from Junction-Lead RθJL 28 °C/W Junction and Storage Temperature Range TJ, TSTG -55~150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4V D.C. REF. Millimeter Min. Max. A 25.4 (TYP) B 5.80 7.62 C 2.60 3.60 D - 0.90 Part Number Type RL251G~RL257G Lead (Pb)-free RL251G-C~RL257G-C Lead (Pb)-free and Halogen-free A C B A D DO-15 |
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