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2SB1193 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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2SB1193 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 3 page ![]() 2SB1193 2 SJD00059AED VBE(sat) IC hFE IC ton, tstg, tf IC PC Ta IC VCE VCE(sat) IC Safe operation area Rth t 0 0 160 40 120 80 20 60 40 80 Ambient temperature T a (°C) (1)TC=Ta (2)With a 100 ×100×2mm Al heat sink (3)Without heat sink (PC=2.0W) (1) (2) (3) 0 −2 −4 −6 −10 −8 0 −12 −2 −10 −4 −8 −6 Collector-emitter voltage V CE (V) TC=25˚C IB=–5mA –1.5mA –0.75mA –0.5mA –1mA –2mA –4mA –3mA − 0.1 − 0.01 − 0.1 −1 −10 −1 −10 (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25 C (1) (2) (3) Collector current I C (A) − 0.01 − 0.1 −1 −10 −1 − 0.1 −10 Collector current I C (A) (1)IC/IB=500 (2)IC/IB=250 (3)IC/IB=100 TC=25˚C (2) (1) (3) − 0.1 −1 −10 10 104 103 102 Collector current I C (A) VCE=–3V TC=100˚C 25˚C –25˚C 0 −8 −2 −6 −4 0.01 0.1 1 10 100 Collector current I C (A) tstg ton tf Pulsed tw=1ms Duty cycle=1% IC/IB=500 (–IB1=IB2) VCC=–50V TC=25˚C − 0.01 −1 − 0.1 −1 −10 −100 −10 −100 −1000 Collector-emitter voltage V CE (V) t=1ms t=10ms ICP IC Non repetitive pulse TC=25˚C DC 10−2 10−1 1 10 102 Time t (s) 10−4 104 103 102 10 1 10−1 10−2 10−3 (1) (2) (1)Without heat sink (2)With a 100 ×100×2mm Al heat sink |
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