Transistors

1

Publication date: March 2003

SJC00122CED

2SC2671F

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High maximum unilateral power gain G

UM

• High transition frequency f

T

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

15

V

Collector-emitter voltage

14

V

Emitter-base voltage (Collector open)

2V

Collector current

80

mA

Collector power dissipation

600

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

µA

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

= 8 V, I

C

= 40 mA

50

150

300



Transition frequency

3.5

5.5

GHz

Collector output capacitance

0.8

1.5

pF

(Common base, input open circuited)

Foward transfer gain

S

2

9

12

dB

Maximum unilateral power gain

= 8 V, I

C

= 40 mA, f = 0.8 GHz

10

13

15

dB

Noise figure

NF

2.0

3.2

dB

50

60

dB

= 500 MHz, V

O

= 100 dBµ/75 Ω

75

86

dB

= 500 MHz, V

O

= 100 dBµ/75 Ω

■ Electrical Characteristics T

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

12 3

+0.6

–0.2

Unit: mm

1: Base

2: Emitter

3: Collector

TO-92-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: See measurement circuit

f1

Signal generator

Converter (75

Ω)

(50

Ω)

Converter (75

Ω)

(50

Ω)

Converter (75

Ω)

(50

Ω)

Mixer

(75

Ω)

Under

test part

DC power

supply

Spectrum

analyzer

f2

Signal generator