Transistors

1

Publication date: December 2002

SJC00278BED

2SC5556

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High transition frequency f

T

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

= 10 V, I

E

= 01

µA

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

110

250



Transition frequency

= 8 V, I

C

= 20 mA, f = 800 MHz

5

6

GHz

Collector output capacitance

0.9

1.2

pF

(Common base, input open circuited)

Foward transfer gain

S

2

7.5

10.0

dB

Maximum unilateral power gain

11.5

dB

Noise figure

NF

= 8 V, I

C

= 20 mA, f = 800 MHz

1.7

dB

■ Electrical Characteristics T

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

15

V

Collector-emitter voltage (Base open)

10

V

Emitter-base voltage (Collector open)

2V

Collector current

80

mA

300

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Marking Symbol: 3K

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package