IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

6,583,505

Fig. 7. Gate Charge Characteristic Curve

Fig. 8. CapacitanceCurves

Fig. 9. Source Current vs. Source

to Drain Voltage

Fig.10.

Transient Thermal Impedance

V

1

10

100

1000

0.1

1

10

Gate Charge - nCoulombs

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

9

10

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

2

4

6

8

10

12

14

16

18

20

V

0

5

10

15

20

0

500

1000

1500

2000

2500

3000

3500

4000

4500

Time - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

D=0.5

C

rss

C

oss

10µs

100µs

1ms

10ms

100ms

C

iss

Limited by R

DS(on)

V

I

I

Single Pulse

f = 1MHz

V

T

T

D=0.2

D=0.1

D=0.05

D=0.01

D=0.02

IXFT 10N100

IXFT 12N100