Transistors

1

Publication date: August 2003

SJC00298AED

2SC5846

Silicon NPN epitaxial planar type

For general amplification

■ Features

• High forward current transfer ratio h

FE

• SSS-mini type package, allowing downsizing and thinning of the

equipment and automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= 10 µΑ, I

E

= 060

V

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

= 20 V, I

E

= 0

0.1

µA

Collector-emitter cutoff current (Base open)

100

µA

Forward current transfer ratio

180

390



Collector-emitter saturation voltage

= 100 mA, I

B

= 10 mA

0.1

0.3

V

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

2.2

pF

(Common base, input open circuited)

Transition frequency

100

MHz

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

60

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

7V

Collector current

100

mA

Peak collector current

200

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Marking Symbol: 7K

0.33

(0.40)

(0.40)

12

3

5˚

+0.05

–0.02

0.10

+0.05

–0.02

0.23

+0.05

–0.02

1: Base

2: Emitter

3: Collector

SSSMini3-F1 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

SSSMini3-F1 Package