RS1DFS - RS1MFS

Taiwan Semiconductor

2

Version:A1708

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-lead thermal resistance per diode

29

°C/W

Junction-to-ambient thermal resistance per diode

84

°C/W

Junction-to-case thermal resistance per diode

30

°C/W

Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage per diode

(1)

0.94

1.10

V

1.01

1.30

0.79

1.00

0.88

1.20

(2)

-

5

µA

-

50

µA

Junction capacitance

7

-

pF

Reverse recovery time

RS1DFS

RS1GFS

-

150

ns

RS1JFS

-

250

ns

RS1KFS

RS1MFS

-

500

ns

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

ORDERING INFORMATION

PART NO.

PART NO.

SUFFIX(*)

PACKING

CODE

PACKING CODE

SUFFIX

PACKAGE

PACKING

RS1xFS

(Note 1, 2)

H

MW

G

SOD-128

3,500 / 7" Plastic reel

MX

SOD-128

14,000 / 13" Plastic reel

Notes:

1.

"xx" defines voltage from 200V (RS1DFS) to 1000V (RS1MFS)

2.

Whole series with green compound (halogen-free)

*: Optional available

EXAMPLE P/N

EXAMPLE P/N

PART NO.

PART NO.

SUFFIX

PACKING

CODE

PACKING CODE

SUFFIX

DESCRIPTION

RS1DFSHMWG

RS1DFS

H

MW

G

AEC-Q101 qualified

Green compound