SD103ATW datasheet(1/2 Pages) SECOS

Part #	SD103ATW

Description	Surface Mount Schottky Diode Array

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

SD103ATW

40 V, 175 mA

Surface Mount Schottky Diode Array

24-Mar-2017 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Fast Switching

Low Leakage Current

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-363

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Peak Repetitive Peak reverse voltage

VRRM

40

V

Working Peak Reverse Voltage

VRWM

40

V

DC Blocking Voltage

VR

40

V

RMS Reverse Voltage

VR(RMS)

28

V

Average Rectified Current

IO

175

mA

Forward Current Surge Peak

@60Hz, 1 cyc, pre diode

IFSM

1

A

Power Dissipation

PD

200

mW

Thermal Resistance Junction to Ambient

RθJA

500

°C / W

Storage temperature

TJ, TSTG

125, -55~150

°C

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Reverse breakdown voltage

V(BR)R

40

-

V

IR=100µA

-

0.37

IF=20mA

Forward voltage

VF

-

0.5

V

IF=100mA

-

2

VR=10V

Reverse current

IR

-

5

uA

VR=30V

Capacitance between terminals

CT

-

50

-

pF

VR=0, f=1MHz

Reveres recovery time

trr

-

10

-

nS

IF=IR=200mA,

IRR=0.1XIR, RL=100

SOT-363

KLL

B

L

F

H

C

J

D G

K

A

E

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.80

2.20

G

0.100 REF.

B

1.80

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.25

D

0.80

1.10

K

8°

E

1.10

1.50

L

0.650 TYP.

F

0.10

0.35

.

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