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CMBTA13 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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CMBTA13 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() UNIT Value Symbol IC Ptot mA Thermal Resistance RthA K/mW from junction to Ambient 500 max 300 Collector current Total power dissipation up to Tamb = 25 oC Junction Temperature max 250 mW Tj max 150 oC Storge Temperature Tstg -65 to +150 oC V Collector-base voltage (open collector) VEBO max 10 V VCES max 30 V VBE = 0 oC D.C. current gain hFE min 5000 IC = 10mA; VCE = 5V Junction Temperature Tj max 150 MHZ IC = 10mA; VCE = 5V Symbol Value UNIT VCES max 30 V VBE = 0 mW Tamb = 25 oC Collector current (d.c.) IC max 300 mA Collector-emitter voltage (open base) Total power dissipation up to Ptot max 250 Collector-emmitter voltage (open base) Collector-base voltage (open emitter) VCBO max 30 VBE = 0 Transition frequency at f = 100MHZ fT min 125 NPN Small-Signal Darlington Transistors CMBTA13 Ratings (at TA = 25 oC unless otherwise specified) Limmiting values Unit: inch (mm) Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 1 2 3 Absolute Maximum Ratings www.rectron.com 1 of 2 |
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