2 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

10

S

Pulse test, t

£ 300 ms, duty cycle £ 2 %

C

ies

3100

pF

C

oes

V

240

pF

C

res

50

pF

Q

g

100

nC

Q

ge

I

30

nC

Q

gc

38

nC

t

d(on)

30

ns

t

ri

30

ns

t

d(off)

90

150

ns

t

fi

70

120

ns

E

off

0.7

1.2

mJ

t

d(on)

35

ns

t

ri

35

ns

E

on

0.5

mJ

t

d(off)

150

ns

t

fi

140

ns

E

off

1.2

mJ

R

thJC

0.62 K/W

R

thCK

TO-247

0.25

K/W

R

thCK

TO-264

0.15

K/W

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

T

1.7

V

Note 2

T

2.5

V

I

RM

I

2

2.5

A

V

t

rr

I

T

50

ns

R

thJC

1.0 K/W

Inductive load, T

I

V

Note 1

Inductive load, T

I

V

Note 1.

IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1

Notes: 1. Switching times may increase for V

2. Pulse test, t

£ 300 ms, duty cycle d £ 2 %

TO-247 AD (IXSH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46 BSC

.215 BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.

TO-264 AA (IXSK) Outline

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025