SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

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verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 8667

Issue 1

Page 1 of 3

BDS18

•

High Voltage

•

Hermetic TO220 Isolated Metal Package

•

Ideally suited for Power Linear, Switching

and general Purpose Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

-120V

VCEO

Collector – Emitter Voltage

-120V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-8A

IB

Base Current

-2A

PD

Total Power Dissipation at

TC ≤ 75°C

50W

Derate Above 75°C

0.4W/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Max.

Units

RθJC

Thermal Resistance, Junction To Case

2.5

°C/W

** This datasheet supersedes document 3346