HS1AFL - HS1MFL

Taiwan Semiconductor

2

Version:A1804

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP.

UNIT

Junction-to-lead thermal resistance per diode

17

°C/W

Junction-to-ambient thermal resistance per diode

85

°C/W

Junction-to-case thermal resistance per diode

19

°C/W

Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP.

MAX. UNIT

Forward voltage per diode

(1)

HS1AFL

HS1BFL

HS1DFL

HS1FFL

0.82

-

V

0.89

0.95

V

0.67

-

V

0.75

0.81

V

Forward voltage per diode

(1)

HS1GFL

0.93

-

V

1.01

1.30

V

0.74

-

V

0.85

1.10

V

Forward voltage per diode

(1)

HS1JFL

HS1KFL

HS1MFL

1.21

-

V

1.36

1.70

V

0.94

-

V

1.10

1.38

V

(2)

-

5

µA

-

150

µA

Junction capacitance

HS1AFL

HS1BFL

HS1DFL

HS1FFL

HS1GFL

11

-

pF

HS1JFL

HS1KFL

HS1MFL

6

-

pF

Reverse recovery time

HS1AFL

HS1BFL

HS1DFL

HS1FFL

HS1GFL

-

50

ns

HS1JFL

HS1KFL

HS1MFL

-

75

ns

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms