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Elektronische Bauelemente

SMG2007-C

Ω

Ω

Ω

P-Channel Enhancement Mode MOSFET

14-Dec-2017 Rev. A

Page 2 of 4

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Gate-Source Threshold Voltage

-0.3

-

-0.9

V

Forward Transconductance

-

19.1

-

S

Gate-Body Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage Current

-

-

-5

µA

-

-

19

-

-

25

Drain-Source On-Resistance

-

-

30

m

Total Gate Charge

-

24.5

-

Gate-Source Charge

-

2.9

-

Gate-Drain Charge

-

4.9

-

nC

Turn-on Delay Time

-

6.8

-

Rise Time

-

26.6

-

Turn-off Delay Time

-

222.8

-

Fall Time

-

115.4

-

nS

Input Capacitance

-

2100

-

Output Capacitance

-

213

-

Reverse Transfer Capacitance

-

166

-

pF

f=1.0MHz

Source-Drain Diode

Continuous Source Current

1

-1.7

A

Pulsed Source Current

3

-10

A

Forward On Voltage

4

-

-

-1.2

V

Reverse Recovery Time

-

67.5

-

ns

Reverse Recovery Charge

-

51.6

-

nC

dI/dt=100A/µs

Notes:

1.

Surface mounted on a 1 inch

2.

When mounted on Min. copper pad.

3.

Pulse width limited by maximum junction temperature , Pulse Width ≤300µs, Duty Cycle≤2%.

4.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%