Elektronische Bauelemente

SSG4411-C

P-Ch Enhancement Mode Power MOSFET

23-Jan-2018 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1

-

-3

V

Forward Transconductance

-

13

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage

Current

-

-

-5

µA

-

-

32

Static Drain-Source On-Resistance

4

-

-

50

m

Total Gate Charge

-

9.8

-

Gate-Source Charge

-

2.2

-

Gate-Drain Charge

-

3.4

-

nC

Turn-on Delay Time

-

16.4

-

Rise Time

-

20.2

-

Turn-off Delay Time

-

55

-

Fall Time

-

10

-

nS

Input Capacitance

-

930

-

Output Capacitance

-

148

-

Reverse Transfer Capacitance

-

115

-

pF

f=1MHz

Source-Drain Diode Characteristics

Continuous Source Current

1

-

-

-5.7

Pulsed Source Current

3

-

-

-25

A

Forward On Voltage

4

-

-

-1.2

V

Notes:

1.

Surface mounted on a 1 inch

2.

When mounted on Min. Copper pad.

3.

Pulse width limited by maximum junction temperature, pulse width≦100µs, duty cycle≦2%.

4.

The data tested by pulsed, pulse width≦300µs, duty cycle≦2%.