Ka-Band SATCOM Transmitter IC

27GHz to 31GHz

F6502 Advance

Short-Form Datasheet

© 2018 Integrated Device Technology, Inc.

1

September 26, 2018

Description

The F6502 is an 8-channel transmitter (TX) silicon IC designed

using a SiGe BiCMOS process for Ka-Band SATCOM phased

array applications. The core IC has 360° 6-bit phase control

coupled with 35dB 6-bit gain control on each channel to achieve

fine beam steering and gain compensation between radiating

channels. The device has a 25dB nominal gain and 13dBm OP1dB.

The core chip achieves an RMS phase error of 3° and an RMS gain

error of 0.4dB over the frequency of operation. The typical total

power consumption is 1.6W (200mW per channel) at OP1dB.

Competitive Advantage



High integration



Orthogonality of phase and amplitude control



Advanced Serial Peripheral Interface (SPI) with 4-state

memory



Superior channel-to-channel isolation



Minimal footprint

Typical Applications



Ka-Band SATCOM



Aerospace and Maritime



Beam Steering



Test and Measurement

Features



27GHz to 31GHz operation



8 radiation channels



6-bit phase control



6-bit gain control



50ns typical gain settling time



20ns typical phase settling time



3° typical RMS phase error



0.4dB typical RMS gain error



35dB gain attenuation range



5-bit IC address



Integrated proportional-to-absolute temperature (PTAT)

sensor with external biasing



-40°C to +95°C internal temperature sensor



Programmable 4-state on-chip memory



Supply voltage: +2.1V to +2.5V



-40°C to +95°C ambient operating temperature range



27°C typical ambient operating temperature



3.8mm x 4.6mm, 62-BGA package

Block Diagram

Figure 1. Block Diagram

RF1

RF2

RF8

RF5

RFC

RF3

RF4

RF7

RF6