SSG4953-C

Ω

Ω

Ω

Dual-P Enhancement Mode Power MOSFET

Elektronische Bauelemente

02-May-2018 Rev. G

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1

-

-2.5

V

Forward Transconductance

-

6

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

-1

µA

-

-

-5

Static Drain-Source On-Resistance

4

-

-

48

m

-

-

82

Total Gate Charge

-

6.4

-

nC

Gate-Source Charge

-

2.2

-

Gate-Drain Charge

-

2.3

-

Turn-on Delay Time

-

9

-

nS

Rise Time

-

16.6

-

Turn-off Delay Time

-

21

-

Fall Time

-

21.6

-

Input Capacitance

-

632

-

pF

f=1MHz

Output Capacitance

-

100

-

Reverse Transfer Capacitance

-

74

-

Source-Drain Diode

Continuous Source Current

1

-

-

-4.9

A

Pulsed Source Current

3

-

-

-10

Forward on Voltage

4

-

-

-1.2

V

Notes:

1.

Surface Mounted on 1”x1” FR4 Board with 2OZ copper.

2.

When mounted on Min. copper pad.

3.

Pulse width limited by maximum junction temperature, Pulse Width≦300µs, Duty Cycle≦2%.

4.

Pulse Test: Pulse Width≦300µs, Duty Cycle≦2%.