SSM452-C datasheet(2/4 Pages) SECOS

2 / 4 page

SSM452-C

-6A, -30V, RDS(ON) 55m

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

27-Oct-2017 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID= -250uA

Breakdown Voltage

Temperature Coefficient

△BVDSS/△TJ

-0.02

V/°C

Reference to 25°C,

ID= -1Ma

Gate Threshold Voltage

VGS(TH)

-1.0

-3.0

VDS=VGS, ID= -250uA

Forward Transconductance

gfs

VDS= -10V, ID= -5.3A

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage Current

(TJ=25°C)

IDSS

-1

µA

VDS= -30V, VGS=0

Drain-Source Leakage Current

(TJ=70°C)

-25

VDS= -24V, VGS=0

Drain-Source On Resistance

RDS(ON)

VGS= -10V, ID= -5.3A

100

VGS= -4.5V, ID= -4.2A

Total Gate Charge

9.2

VGS= -4.5V

VDS= -24V

ID= -5.3A

Gate-Source Charge

Qgs

2.8

Gate-Drain (“Miller”) Charge

Qgd

5.2

Turn-on Delay Time

Td(on)

VDS= -15V

VGS= -10V

ID= -1A

RG=6 , RD=15

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Input Capacitance

Ciss

507

912

VDS= -15V

VGS=0

f=1MHz

Output Capacitance

Coss

222

Reverse Transfer Capacitance

Crss

158

Source-Drain Diode

Forward on Voltage

VSD

-1.2

VGS=0, IS= -2.3A

Reverse Recovery Time

Trr

VGS=0, IS= -5.3A

dl/dt=100A/µs

Reverse Recovery Charge

Qrr

Notes:

Pulse width limited by Maximum junction temperature.

Pulse width≦300µs, Duty cycle≦2%.

Surface mounted on 1 in

2 copper pad of FR4 board; 120°C/W when mounted on M in. copper pad.

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