TP65H050WS datasheet(4/12 Pages) TRANSPHORM

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June 13, 2018

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tp65h050ws.1

TP65H050WS

Electrical Parameters (TJ=25°C unless otherwise stated)

Symbol

Parameter

Min

Typ

Max

Unit

Test Conditions

Forward Device Characteristics

V(BL)DSS

Drain-source voltage

650

—

VGS=0V

VGS(th)

Gate threshold voltage

3.3

4.8

VDS=VGS, ID=0.7mA

ΔVGS(th)/TJ

Gate threshold voltage temperature

coefficient

—

-6.2

—

mV/°C

RDS(on)eff

Drain-source on-resistance a

—

mΩ

VGS=10V, ID=22A

—

103

—

VGS=10V, ID=22A, TJ=150°C

IDSS

Drain-to-source leakage current

—

2.5

µA

VDS=650V, VGS=0V

—

VDS=650V, VGS=0V, TJ=150°C

IGSS

Gate-to-source forward leakage current

—

100

VGS=20V

—

-100

VGS=-20V

CISS

Input capacitance

—

1000

—

VGS=0V, VDS=400V, f=1MHz

COSS

Output capacitance

—

130

—

CRSS

Reverse transfer capacitance

—

CO(er)

Output capacitance, energy related b

—

190

—

VGS=0V, VDS=0V to 400V

CO(tr)

Output capacitance, time related c

—

310

—

Total gate charge

—

VDS=400V, VGS=0V to 10V,

ID=22A

QGS

Gate-source charge

—

QGD

Gate-drain charge

—

QOSS

Output charge

—

124

—

VGS=0V, VDS=0V to 400V

tD(on)

Turn-on delay

—

VDS=400V, VGS=0V to 12V,

ID=22A, RG = 40Ω

Rise time

—

tD(off)

Turn-off delay

—

Fall time

—

Notes:

Dynamic on-resistance; see Figures 17 and 18 for test circuit and conditions

Equivalent capacitance to give same stored energy as VDS rises from 0V to 400V

Equivalent capacitance to give same charging time as VDS rises from 0V to 400V

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