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IXFN38N100Q2 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFN38N100Q2
Description  N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN38N100Q2 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 1mA
1000
V
V
GS(th)
V
DS = VGS, ID = 8mA
2.5
5.0 V
I
GSS
V
GS = ±30 V, VDS = 0
±200 nA
I
DSS
V
DS = VDSS
T
J =
25°C
50 mA
V
GS = 0 V
T
J = 125°C
3 mA
R
DS(on)
V
GS = 10 V, ID = 0.5 • ID25
0.25
Note 1
DS99027A(06/03)
HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g, Low Intrinsic Rg
High dV
/dt, Low t
rr
IXFN38N100Q2
V
DSS
= 1000 V
I
D25
=
38 A
R
DS(on)=
0.25
t
rr
≤≤≤≤ 300 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25°C to 150°C
1000
V
V
DGR
T
J = 25°C to 150°C; RGS = 1 MΩ
1000
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25°C
38
A
I
DM
T
C = 25°C, pulse width limited by TJM
152
A
I
AR
T
C = 25°C
38
A
E
AR
T
C = 25°C
60
mJ
E
AS
T
C = 25°C
5.0
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
20
V/ns
T
J ≤ 150°C, RG = 2 Ω
P
D
T
C = 25°C
890
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
V
ISOL
50/60 Hz, RMS, t = 1 minute
2500
V
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
30
g
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Double metal process for low
gate resistance
miniBLOC, with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Advantages
Easy to mount
Space savings
High power density


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