Elektronische Bauelemente

SSPR5 06-C

-Channel Enhancement Mode Power MOSFET

19-Oct-2018 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

60

-

-

V

Gate Threshold Voltage

1

-

2.5

V

Forward Transconductance

-

13

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage

Current

-

-

5

µA

-

-

90

Static Drain-Source On-Resistance

4

-

-

100

m

Total Gate Charge

-

5

-

Gate-Source Charge

-

1.68

-

Gate-Drain (“Miller”) Change

-

1.9

-

nC

Turn-on Delay Time

-

1.6

-

Rise Time

-

7.2

-

Turn-off Delay Time

-

25

-

Fall Time

-

14.4

-

nS

Input Capacitance

-

511

-

Output Capacitance

-

38

-

Reverse Transfer Capacitance

-

25

-

pF

f=1MHz

Source-Drain Diode

Continuous Source Current

1

-

-

5

A

Pulsed Source Current

3

-

-

12

A

Diode Forward Voltage

4

-

-

1.2

V

Reverse Recovery Time

-

9.7

-

nS

Reverse Recovery Charge

-

5.8

-

nC

Notes:

1.

Surface mounted on 1”x1” FR-4 board with 2OZ copper.

2.

When mounted on Min. Copper pad.

3.

Pulse width limited by maximum junction temperature, pulse width≦300µs, duty cycle≦2%.

4.

The data tested by pulsed, pulse width≦300µs, duty cycle≦2%.