SST6318-C datasheet(2/4 Pages) SECOS

2 / 4 page

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

SST6318-C

0.35A, 60V, RDS(ON) 1.6

Ω

Dual N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

05-Oct-2018 Rev. B

Page 2 of 4

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250

µA

Gate Threshold Voltage

VGS(th)

0.5

1.5

VDS=VGS, ID=250

µA

Forward Transconductance

gfs

0.36

VDS=10V, ID=220mA

Gate-Source Leakage Current

IGSS

±10

µA

VGS= ±20V

Drain-Source Leakage

Current

TJ=25°C

IDSS

µA

VDS=48V, VGS=0

TJ=55°C

V DS=48V, VGS=0

Static Drain-Source On-Resistance 4

RDS(ON)

1.6

VGS=10V, ID=220mA

VGS=4.5V, ID=220mA

4.5

VGS=2.5V, ID=120mA

Forward on Voltage 4

VSD

1.2

VGS=0, IS=350mA, TJ=25°C

Total Gate Charge

0.76

ID=250mA

VDS=30V

VGS=4.5V

Gate-Source Charge

Qgs

0.085

Gate-Drain Charge

Qgd

0.26

Turn-on Delay Time

Td(on)

VDD=30V

ID=200mA

VGS=10V

RG=6

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Input Capacitance

Ciss

VGS=0

VDS=25V

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

2.8

Notes:

Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

Surface mounted on FR4 Board using the minimum recommended pad size.

Pulse width limited by maximum junction temperature, Pulse Width≦300

µs, Duty Cycle≦2%.

The data tested by pulsed, pulse width≦300µs, duty cycle≦2%.

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