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M36LLR8760DF Datasheet(PDF) 14 Page - STMicroelectronics

Part # M36LLR8760DF
Description  256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M36LLR8760DF Datasheet(HTML) 14 Page - STMicroelectronics

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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
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Table 7. Flash 2 DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDDF2 Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQF
±1
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQF
±1
µA
IDD1
Supply Current
Asynchronous Read (f=5MHz)
E = VIL, G = VIH
13
15
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
25
70
µA
IDD3
Supply Current (Standby)
E = VDDQF ± 0.2V
K=VSS
25
70
µA
IDD4
Supply Current (Automatic Standby)
E = VIL, G = VIH
25
70
µA
IDD5
(1)
Supply Current (Program)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
Supply Current (Erase)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=54MHz) in another Bank
35
52
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDDQF ± 0.2V
K=VSS
25
70
µA
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
IPP2
VPP Supply Current (Read)
VPP ≤ VDD
0.2
5
µA
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤ VDD
0.2
5
µA



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