SPICE Device Model Si5404BDC

www.vishay.com

Document Number: 73127

2

08-Sep-04

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

1.1

V

On-State Drain Current

a

100

A

0.022

0.022

Drain-Source On-State Resistance

a

0.030

0.031

Ω

Forward Transconductance

a

45

26

S

Forward Voltage

a

0.78

0.70

V

Dynamic

b

Total Gate Charge

6.8

7

Gate-Source Charge

1.7

1.7

Gate-Drain Charge

2

2

nC

Notes

a.

Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.