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MJ10005P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ10005P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor MJ10005P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 250mA, IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 400mA 1.9 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ,IB= 2.0A 3.0 V VBE(sat)1 Base-Emitter Saturation Voltage IC= 10A ,IB= 400mA 2.5 V ICER Collector Cutoff Current VCB=400V, IE= 0;RBE=50Ω; Tj=100℃ 5 mA ICEV Collector Cutoff Current VCE= 450V, IB=0,VBE=1.5V VCE= 450V, IB=0,VBE=1.5V Tj=150℃ 0.25 5 mA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 175 mA hFE DC Current Gain IC= 5A ; VCE= 5V 300 1800 |
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