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STTH6002C Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH6002C Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() STTH6002C 4/5 0 10 20 30 40 50 60 70 80 10 100 1000 t(ns) rr dI /dt(A/µs) F T =25°C j T =125°C j I =30A F V =160V R Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode). 0 2 4 6 8 10 12 14 10 100 1000 I(A) RM T =25°C j T =125°C j dI /dt(A/µs) F I =30A F V =160V R Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 IRM Qrr Q; rr I [T ]/Q ;I [T =125°C] RM j rr RM j I =30A F V =160V R T (°C) j Fig. 8: Dynamic parameters versus junction temperature. |
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