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TSSD10L60SW Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSSD10L60SW Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
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3 / 6 page ![]() TSSD10L45SW - TSSD10L60SW Taiwan Semiconductor 3 Version:B1704 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 0 5 10 15 30 60 90 120 150 Resistive or inductive load with heat sink 10 100 1000 10000 1 10 100 f=1.0MHz Vsig=50mVp-p TSSD10L45SW 1 10 100 1,000 10,000 100,000 10 20 30 40 50 60 70 80 90 100 T J=125°C TSSD10L45SW 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Pulse width 300μs 1% duty cycle T J=25°C T J=125°C TSSD10L45SW LEAD TEMPERATURE (°C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.001 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Pulse width T J=25°C T J=125°C UF1DLW FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) T J =25°C |
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