TSSD20L100SW - TSSD20L200SW

Taiwan Semiconductor

2

Version:B1702

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-lead thermal resistance

17

°C/W

Junction-to-ambient thermal resistance

58

°C/W

Junction-to-case thermal resistance

18

°C/W

Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage per diode

(1)

TSSD20L100SW

0.60

-

V

0.75

0.87

V

0.55

-

V

0.68

0.79

V

TSSD20L150SW

0.80

-

V

0.89

1.05

V

0.67

-

V

0.78

0.90

V

TSSD20L200SW

0.81

-

V

0.90

1.1

V

0.67

-

V

0.78

0.91

V

Reverse current @ rated

(2)

TSSD20L100SW

-

50

µA

-

20

mA

TSSD20L150SW

-

20

µA

-

1

mA

TSSD20L200SW

-

20

µA

-

1

mA

Junction capacitance

TSSD20L100SW

1000

-

pF

TSSD20L150SW

920

-

pF

TSSD20L200SW

880

-

pF

Notes:

1.

Pulse test with PW=0.3 ms

2.

Pulse test with PW=30 ms