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© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

200

V

V

DGR

T

J

= 25

°C to 150°C; R

200

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

A

I

DM

T

120

A

I

AR

30

A

E

AR

T

mJ

dv/dt

I

S

≤ I

5

V/ns

T

P

D

T

190

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

6g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD

N-Channel Enhancement Mode

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

200

V

V

GS(th)

V

DS

= V

4

V

I

GSS

V

GS

=

±20 V

±100

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

µA

V

T

250

µA

R

DS(on)

V

GS

= 10 V, I

0.085

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IRFP 250

V

DSS

= 200 V

I

D (cont)

= 30 A

R

DS(on)

= 85 m

Ω

Ω

Ω

Ω

Ω

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Features

l

International standard package

JEDEC TO-247 AD

l

Low R

l

Rugged polysilicon gate cell structure

l

High commutating dv/dt rating

l

Fast switching times

Applications

l

Switch-mode and resonant-mode

power supplies

l

Motor controls

l

Uninterruptible Power Supplies (UPS)

l

DC choppers

Advantages

l

Easy to mount with 1 screw

(isolated mounting screw hole)

l

Space savings

l

High power density

92602E(5/96)

D (TAB)

Standard Power MOSFET

IXYS reserves the right to change limits, test conditions, and dimensions.