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MJD32C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MJD32C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente MJD32C -3A, -100V P P Epitaxial Silicon Transistor 07-Jun-2017 Rev. A Page 1 of 2 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -100 V Collector to Emitter Voltage VCEO -100 V Emitter to Base Voltage VEBO -5 V Collector Current IC -3 A Collector Power Dissipation PC 1.25 W Junction and Storage Temperature TJ, TSTG 150, -65 ~ 150 °C CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -100 - V IC= -1mA, IE=0 Collector-Emitter Breakdown Voltage 1 VCEO(sus) -100 - V IC= -30mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - V IE= -1mA, IC=0 Collector Cut-Off Current ICES - -20 uA VCE= -100V, VEB=0 Collector Cut-Off Current ICEO - -50 uA VCE= -60V, IB=0 Emitter Cut-Off Current IEBO - -1 mA VEB= -5V, IC=0 hFE(1) 25 - VCE= -4V, IC= -1A DC Current Gain hFE(2) 15 75 VCE= -4V, IC= -3A Collector-Emitter Saturation Voltage VCE(Sat) - -1.2 IC= -3A, IB= -0.375A Base-Emitter Voltage VBE(Sat) - -1.8 VCE= -4V, IC= -3A Transition Frequency fT 3 - MHz VCE= -10V, IC= -0.5A, fT=1KHz Notes: 1. Pulse Test: Pulse width≦300µs, duty cycle≦2% Package MPQ Leader Size TO-252 2.5K 13 inch TO-252 (D-Pack) A C D N O P G E F H K J M B http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E 6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2 |
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