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MJD32C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # MJD32C
Description  PNP Epitaxial Silicon Transistor
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MJD32C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  MJD32C Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH MJD32C Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
MJD32C
-3A, -100V
P P Epitaxial Silicon Transistor
07-Jun-2017 Rev. A
Page 1 of 2
1
Base
3
Emitter
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Designed for General Purpose Amplifier and Low
Speed Switching Applications
Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-3
A
Collector Power Dissipation
PC
1.25
W
Junction and Storage Temperature
TJ, TSTG
150, -65 ~ 150
°C
CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Max.
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-100
-
V
IC= -1mA, IE=0
Collector-Emitter Breakdown Voltage
1
VCEO(sus)
-100
-
V
IC= -30mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
-
V
IE= -1mA, IC=0
Collector Cut-Off Current
ICES
-
-20
uA
VCE= -100V, VEB=0
Collector Cut-Off Current
ICEO
-
-50
uA
VCE= -60V, IB=0
Emitter Cut-Off Current
IEBO
-
-1
mA
VEB= -5V, IC=0
hFE(1)
25
-
VCE= -4V, IC= -1A
DC Current Gain
hFE(2)
15
75
VCE= -4V, IC= -3A
Collector-Emitter Saturation Voltage
VCE(Sat)
-
-1.2
IC= -3A, IB= -0.375A
Base-Emitter Voltage
VBE(Sat)
-
-1.8
VCE= -4V, IC= -3A
Transition Frequency
fT
3
-
MHz
VCE= -10V, IC= -0.5A, fT=1KHz
Notes:
1.
Pulse Test: Pulse width≦300µs, duty cycle≦2%
Package
MPQ
Leader Size
TO-252
2.5K
13 inch
TO-252 (D-Pack)
A
C
D
N
O
P
G E
F
H
K
J
M
B
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.35
6.9
J
2.3 REF.
B
4.95
5.53
K
0.89 REF.
C
2.1
2.5
M
0.45
1.14
D
0.41
0.9
N
1.55 Typ.
E
6
7.5
O
0
0.13
F
2.90 REF
P
0.58 REF.
G
5.4
6.4
H
0.6
1.2


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