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25PT Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part # 25PT
Description  Stansard SCRs
PDF  6 Pages
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

25PT Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

  25PT Datasheet HTML 1Page - Nell Semiconductor Co., Ltd 25PT Datasheet HTML 2Page - Nell Semiconductor Co., Ltd 25PT Datasheet HTML 3Page - Nell Semiconductor Co., Ltd 25PT Datasheet HTML 4Page - Nell Semiconductor Co., Ltd 25PT Datasheet HTML 5Page - Nell Semiconductor Co., Ltd 25PT Datasheet HTML 6Page - Nell Semiconductor Co., Ltd  
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25PTxxxx
Unit
IGT
VGD
IH
mA
dV/dt
VTM
IDRM
IRRM
mA
IL
V = 12V, R = 33Ω
D
L
V = V
, R = 3.3KΩ
D
DRM
L
R = 220Ω
GK
I = 500mA, Gate open
T
I = 1.2
×I
G
GT
V = 67% V
Gate open
D
DRM
,
-
0.2
60
40
500
mA
V
V
mA
V/µs
I = 50A, t = 380µs
T
P
T = 125°C
j
T = 25°C
j
T = 25°C
j
V
µA
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
TEST CONDITIONS
SYMBOL
V =V
, V =V
D
DRM
R
RRM
1.6
5
2
R = 220Ω
GK
Max.
Max.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
4
THERMAL RESISTANCE
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
1.0
45
°C/W
°C/W
UNIT
VALUE
SYMBOL
Parameter
2
D PAK/TO-220AB
TO-220AB insulated/TO-220F
2
TO-263(D PAK)
TO-220AB/TO-220AB insulated/TO-220F
1.5
60
VGT
V
0.77
Vto
T = 125°C
j
PRODUCT SELECTOR
PART NUMBER
VOLTAGE (xx)
SENSITIVITY
600
V
40 mA
1000 V
25PTxxA/25PTxxAl
25PTxxAF
V
V
800 V
V
PACKAGE
TO-220AB
V
V
2
D PAK
40 mA
Rd
mΩ
T = 125°C
j
T = 125°C
j
T = 125°C
j
Max.
Max.
14
2
S = 1 cm
Threshold Voltage
Dynamic Resistance
Min.
1.3
S=Copper surface under tab
D
10
40
4
100
150
V
1200 V
V
V
V
V
V
V
V
V
V
V
25PTxxA-D/25PTxxAl-D
25PTxxH-D
4~10 mA
4~10 mA
TO-220AB
2
D PAK
Page 2 of 6
www.nellsemi.com
DYNAMIC CHARACTERISTICS
tgt
tq
1.0
µS
UNIT
VALUE
SYMBOL
PARAMETER
I = 40A, V = V
(Max.),
TM
D
DRM
I = 0.1A, dI /dt = 5A/μs, T = 25°C
G
G
J
-
100
turn-on time
TEST CONDITIONS
Min.
Typ.
Max.
-
-
-
µS
Commutated
V = 67% V
, I = 50A,
D
DRM TM
V = 25V, R
= 100Ω, dI /dt = 30A/μs,
R
GK
TM
dV
/dt = 50V/μs, T = 125°C
D
J
turn-off time
Gate-controlled
25PTxxAF-D
V
V
V
V
V
V
V
V
4~10 mA
TO-220F
40 mA
TO-220F
25PTxxH
25PT Series RoHS
RoHS



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